AlN epitaxial growth on off-angle R-plane sapphire substrates by MOCVD

Autor:	Tomohiko Shibata, Junko Shibata, Kazuyuki Kaigawa, Yukinori Nakamura, Hiroaki Sakai, Mitsuhiro Tanaka, Keiichiro Asai
Rok vydání:	2001
Předmět:	Materials science business.industry Chemical vapor deposition Nitride Condensed Matter Physics Epitaxy Inorganic Chemistry Crystal Crystallography Transmission electron microscopy Materials Chemistry Sapphire Optoelectronics Metalorganic vapour phase epitaxy Thin film business
Zdroj:	Journal of Crystal Growth. 229:63-68
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(01)01051-x
Popis:	A-plane (1210) AlN films were deposited on the off-angle R-plane (1 102) sapphire substrates, in which the surface plane was tilted towards the [1101] sapphire direction, by metalorganic chemical vapor deposition in order to clarify off-angle effects. The polar direction of the AlN film was inverted by changing the sign of the off-angle and the off-angle was effective in restraining the generation of inverted twins in the AlN. A minus off-angle was found to improve total crystal quality of the AlN from X-ray diffraction results. High-resolution transmission electron microscopy images in the vicinity of interfaces between the AlN and the sapphire indicated that atomic arrangement at an initial AlN growth stage influenced the total crystal quality.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::42de3b333f014e2f083dbcc8e69db59d https://doi.org/10.1016/s0022-0248(01)01051-x Zobrazit plný text záznamu Full Text from ScienceDirect