Isotopically enriched designer-diamond anvil
Autor: | Paul A. Baker, Randolph S. Peterson, Yogesh K. Vohra, Samuel T. Weir |
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Rok vydání: | 2003 |
Předmět: | |
Zdroj: | Applied Physics Letters. 83:1734-1736 |
ISSN: | 1077-3118 0003-6951 |
DOI: | 10.1063/1.1606877 |
Popis: | Isotopically enriched (42 at. % 13C) designer-diamond anvils were grown by microwave plasma chemical vapor deposition using methane/hydrogen/oxygen chemistry. These isotopically enriched diamond layers can modify the thermal properties of the culet of high-pressure anvils and also allow the use of a 13C/12C Raman pressure sensor system for high-pressure, high-temperature measurements. Raman spectroscopy clearly revealed the isotopically mixed nature of the culet while the photoluminescence spectra at 80 K demonstrate the nitrogen-based defect center near the culet of the diamond anvil. The ability to isotopically modify the diamond culets offers yet another functionality for the embedded electric and magnetic sensors in a designer-diamond anvil. |
Databáze: | OpenAIRE |
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