On the role of Ti adlayers for resistive switching in HfO2-based metal-insulator-metal structures: Top versus bottom electrode integration
| Autor: | M. Lukosius, Thomas Schroeder, Sebastian Thiess, J. Dabrowski, Ch. Wenger, Ioan Costina, Dirk Wolansky, A. Fox, Mirko Fraschke, Bernd Tillack, Enrique Miranda, Damian Walczyk, Ch. Walczyk |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
Materials science
business.industry Process Chemistry and Technology chemistry.chemical_element Metal-insulator-metal Titanium nitride Surfaces Coatings and Films Electronic Optical and Magnetic Materials Non-volatile memory chemistry.chemical_compound Semiconductor chemistry X-ray photoelectron spectroscopy Getter Electrode Materials Chemistry Optoelectronics Electrical and Electronic Engineering Tin business Instrumentation |
| Zdroj: | Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29:01AD02 |
| ISSN: | 2166-2754 2166-2746 |
| DOI: | 10.1116/1.3536524 |
| Popis: | The authors demonstrate bipolar resistive switching in TiN/HfO2/Ti(top)/TiN devices using a (Bi) complementary metal-oxide semiconductor (CMOS) compatible technology process. The device performance includes a cycling endurance in dc sweeping mode >103. The results suggest that HfO2-based metal-insulator-metal devices with Si CMOS compatible metal electrodes may be well suited for future embedded nonvolatile memory applications. However, hysteretic current-voltage characteristics were only observed for a Ti top adlayer, whereas a Ti bottom adlayer integration did not show any resistive switching effect. Using x-ray photoelectron spectroscopy, the authors examined the interface chemistry of the Ti/HfO2 interface. It is clearly observed that Ti top adlayer deposition results in an increased nitrogen- and oxygen-gettering activity in contrast to Ti bottom adlayer. It follows that the formation of a nonstoichiometric HfO2 layer at the Ti/HfO2 interface is crucial for resistive switching. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|