Poly-Si Thin-Film Transistors with N-Type Line-Array Doping Channels Fabricated by Nanoimprint Lithography
| Autor: | Tzu Nien Lee, Henry J. H. Chen, Pin Tun Huang |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.industry Transistor Doping technology industry and agriculture 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials law.invention Nanoimprint lithography chemistry.chemical_compound Ion implantation chemistry law Thin-film transistor 0103 physical sciences Optoelectronics Methyl methacrylate 0210 nano-technology business Voltage Leakage (electronics) |
| Zdroj: | ECS Journal of Solid State Science and Technology. 8:Q158-Q163 |
| ISSN: | 2162-8777 2162-8769 |
| DOI: | 10.1149/2.0161908jss |
| Popis: | This study focuses on the characteristics of polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) with n-type line-array doping channels manufactured by nanoimprint lithography. Array doping patterns with a line width/space of approximately ~400–800 nm were fabricated by ion implantation through a poly(methyl methacrylate) mask patterned with the nanoimprint technology. The proposed TFTs show a lower threshold voltage, higher ON/OFF ratio, better subthreshold swing, higher field-effect mobility, lower gate-induced drain leakage, and reduced kink-effect compared with the conventional single-channel ones. The high implantation dosage effects of line-array doping were also investigated. This method can be applied to fabricate high-performance poly-Si TFTs in the future. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|