Electrical properties of InGaN grown by molecular beam epitaxy

Autor:	Hai Lu, Lester F. Eastman, K. D. Matthews, Clara Ji-Hyun Cho, William J. Schaff, Troy Richards, D. Hao, Ho-Young Cha, Xiaodong Chen
Rok vydání:	2008
Předmět:	Indium nitride Materials science Photoconductivity Doping Analytical chemistry Gallium nitride Conductivity Condensed Matter Physics Mole fraction Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Hall effect Molecular beam epitaxy
Zdroj:	physica status solidi (b). 245:868-872
ISSN:	1521-3951 0370-1972
DOI:	10.1002/pssb.200778710
Popis:	The electrical properties of InGaN that is either undoped, or Mg doped, are compared to learn about the nature of p-type conductivity. For In alloy fraction beyond 5% Hall measurements do not indicate p-type polarity, even when Mg doping is employed. In contrast, hot probe measurements show that p-polarity can be measured for the entire range of Mg-doped In mole fractions. The conflicting polarity indications are primarily the result of surface electron accumulation. Parasitic surface electron conductivity can further be seen in p–n homojunctions at In fractions including 20% and 30%. This has an impact on structures such as solar cells. Temperature variable conductivity and PL from different layer structures provides further understanding of the nature of InGaN:Mg. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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