Self‐aligned native‐oxide ridge‐geometry AlxGa1−xAs‐GaAs quantum well heterostructure laser arrays

Autor:	D. J. Holmgren, S. C. Smith, R. S. Burton, Robert D. Burnham, Tuviah E. Schlesinger
Rok vydání:	1992
Předmět:	X-ray absorption spectroscopy Materials science Physics and Astronomy (miscellaneous) Oxide Geometry Heterojunction Laser Semiconductor laser theory law.invention Crystal chemistry.chemical_compound chemistry Etching (microfabrication) law Quantum well
Zdroj:	Applied Physics Letters. 60:1776-1778
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.107184
Popis:	Process conditions for fabricating ridge geometry AlxGa1−xAs‐GaAs quantum well heterostructure laser arrays utilizing a high quality self‐aligned native oxide of AlxGa1−xAs are presented. Wet oxidation is performed, after etching ridges, via H2O vapor in a N2 or N2/H2(10%) carrier gas at 435–445 °C for 15–20 min. The formation of a uniform smooth oxide was found to be critically dependent on the crystal environment prior to the oxidation process. Characteristics of devices fabricated by this process are presented.
Databáze:	OpenAIRE
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