Topographic and Reflectometric Investigation of Crystallographic Defects and Surface Roughness in 4H Silicon Carbide Homoepitaxial Layers Deposited at Various Growth Rates

Autor:	Carsten Paulmann, Wojciech Wierzchowski, T. Balcer, Krzysztof Wieteska, Wlodek Strupinski, K. Kościewicz, K. Mazur
Rok vydání:	2012
Předmět:	chemistry.chemical_compound Materials science chemistry Surface roughness Silicon carbide General Physics and Astronomy Composite material
Zdroj:	Acta Physica Polonica A. 121:915-919
ISSN:	1898-794X 0587-4246
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::42af3eeaad9a9b07611e89ebb412ec39 https://doi.org/10.12693/aphyspola.121.915 Zobrazit plný text záznamu Plný text ve formátu PDF