Flexible GaAs//Cu(In1-x,Gax)(Sy,Se1-y)2-based Three-Junction Solar Cells Using Modified Smart Stack Technology

Autor: Makita, K., Tomita, H., Mizuno, H., Oshima, R., Shoji, Y., Müller, R., Lackner, D., Dimroth, F., Sugaya, T.
Jazyk: angličtina
Rok vydání: 2022
Předmět:
DOI: 10.4229/wcpec-82022-2co.2.2
Popis: 8th World Conference on Photovoltaic Energy Conversion; 270-272
Multijunction (MJ) solar cells achieve very high efficiencies by effectively utilizing the solar spectrum. Previously, we constructed a GaAs//CuIn1-yGaySe2 (CIGSe) MJ solar cell using a unique mechanical stacking technology with Pd nanoparticle and silicone adhesive at the bonding interface (modified smart stack technology). The modified smart stack was developed to increase the bonding strength of the GaAs//CIGSe interface. The efficiency of 28.06% with a InGaP/AlGaAs//CIGSe three-junction solar cell was the best value among GaAs//CIGSe tandem solar cells as two-terminal. In this report, we fabricated a flexible InGaP/AlGaAs//Cu(In1-x,Gax)(Sy,Se1-y)2 (CIGSSe) threejunction solar cell using a flexible CIGSSe bottom cell. Appling the modified smart stack, the total efficiency with 24.3% for aperture area (26.7% for active area) was realized under the global standard AM1.5G spectrum. This is the first demonstration as a flexible GaAs//CIGSe-based MJ solar cell. The superior performance can be achieved by improving the reflection loss at the bonding interface. We predict that the efficiency could be boosted to 35% by minimizing the thickness of transparent conducting oxide layer and the surface roughness of CIGSSe cell. The results demonstrate the potential of GaAs//CIGSe-based MJ solar cell as next-generation solar cells for application such as vehicle-integrated photovoltaics.
Databáze: OpenAIRE