Distribution of Forward Voltage of SiC Schottky Barrier Diode Using Ti Sintering Process
| Autor: | Shozo Shikama, Naoki Yutani, Yoshinori Matsuno, Ken Ichi Ohtsuka, Kenichi Kuroda, Hiroaki Sumitani |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
business.industry Mechanical Engineering Schottky barrier Schottky diode Sintering Substrate (electronics) Condensed Matter Physics Metal–semiconductor junction Mechanics of Materials Electronic engineering Optoelectronics General Materials Science business Dispersion (chemistry) Voltage Diode |
| Zdroj: | Materials Science Forum. :979-982 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.600-603.979 |
| Popis: | The forward current density-voltage (JF-VF) characteristics of SiC Schottky barrier diodes (SBDs) with an epilayer thickness between 9.6 and 10 μm and donor concentration (ND) ranging from 4.0x1015 to 5.7x1015 cm-3 was evaluated. It was found that the Schottky barrier height (Φb) can be stabilized by Ti sintering process and the forward current (IF) abruptly rises at the same knee voltage for all samples. On the other hand, the on-resistance (Ron) and VF were dispersed. The instability corresponds to the values calculated by the dispersion of ND, substrate resistivity and substrate thickness. |
| Databáze: | OpenAIRE |
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