Characterization of free carriers in IV-VI laser materials from infrared reflectivity
| Autor: | D B Kushev, N N Zheleva |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Materials science
business.industry Infrared reflectivity Plasma Condensed Matter Physics Laser Reflectivity Free carrier Spectral line Electronic Optical and Magnetic Materials law.invention Effective mass (solid-state physics) Semiconductor law Materials Chemistry Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Semiconductor Science and Technology. 8:S322-S325 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/8/1s/071 |
| Popis: | An approach for characterization of some narrow-gap semiconductors from the minimum of the bulk reflectivity spectra in the plasma reflectivity region is presented. Determination of the concentration, effective mass, relaxation time and optical mobility of free carriers of IV-VI laser materials is given. A simple empirical method for estimation of the bulk reflectivity minimum in the case of interference spectra is proposed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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