Optical property simulation of single-layer halftone phaseshifting masks for DUV microlithography

Autor:	Byeong-Soo Bae, Sung-Chul Lim, Zhong-Tao Jiang, Eunah Kim, Seungbum Hong, Chang Kwon Hwangbo, Sang-Gyun Woo, Kwangsoo No, Young-Bum Koh
Rok vydání:	1996
Předmět:	Halftone Materials science business.industry Mascara Molar absorptivity Condensed Matter Physics Electronic Optical and Magnetic Materials Wavelength Optics Materials Chemistry Transmittance Optoelectronics Electrical and Electronic Engineering business Refractive index Lithography Single layer
Zdroj:	Semiconductor Science and Technology. 11:1450-1455
ISSN:	1361-6641 0268-1242
DOI:	10.1088/0268-1242/11/10/016
Popis:	An optical simulation for a single-layer halftone phaseshifting mask (SLHTPSM) has been established and verified by the experimental data from several different sources. This simulation is suitable for a wide lithography exposure wavelength; for example, i-line, KrF and ArF etc. Theoretical analyses give some important tendencies of the optical parameters such as refractive index, extinction coefficient and film thickness. The optimum SLHTPSM structures for KrF (248 nm) have been derived by the simulation processes, which include the optimized combinations of extinction coefficient/refractive index and film thickness/refractive index achieved to deliver the 5%, 10% and 20% transmittance and phaseshifting. The simulation shows the film refractive index to be in the region of 1.7 - 3. The simulation program also provides guidance for the SLHTPSM fabrications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::429466e281d2e309f444d415d635d16a https://doi.org/10.1088/0268-1242/11/10/016 Zobrazit plný text záznamu