Peculiarities of the memory state formation in thin Ge2Sb2Te5 films
| Autor: | S A Fefelov, L P Kazakova, N A Bogoslovskiy, A O Yakubov, A B Bylev |
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| Rok vydání: | 2021 |
| Předmět: | |
| Zdroj: | Journal of Physics: Conference Series. 2103:012087 |
| ISSN: | 1742-6596 1742-6588 |
| DOI: | 10.1088/1742-6596/2103/1/012087 |
| Popis: | The current-voltage characteristics of Ge2Sb2Te5 thin films were measured by a sequence of triangular current pulses with an increasing maximum current. Each current pulse forms in the sample a conducting filament with an area proportional to the maximum current in the recording pulse. |
| Databáze: | OpenAIRE |
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