Accommodation of the Lattice Mismatch at the VCx-WC Interface
| Autor: | S. Hamar-Thibault, Sabine Lay, M. Loubradou |
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| Rok vydání: | 2004 |
| Předmět: |
Thin layers
Materials science Condensed matter physics Doping Alloy engineering.material Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Grain growth Crystallography Lattice (order) engineering General Materials Science Grain boundary High-resolution transmission electron microscopy |
| Zdroj: | Interface Science. 12:187-195 |
| ISSN: | 0927-7056 |
| DOI: | 10.1023/b:ints.0000028649.89286.cf |
| Popis: | A VC doped WC-Co alloy is investigated using high resolution transmission electron microscopy. The VC grain growth inhibitor induces the presence of a thin layer on the surfaces of the WC grains in contact with Co and precipitates in the corners of Co pockets. These (VW)Cx compounds adopt an epitaxial orientation relationship with regards to the (0001) base facets of the WC crystals. Due to the small difference in lattice parameters, misfit dislocations are expected in the interfaces. Unlike the thin layers where no defects are observed, two kinds of dislocations are pointed out for larger precipitates. 1/6〈112〉VC interfacial dislocations are sometimes present while more often 1/2〈1¯10〉VC dislocations lying above the interface in the (VW)Cx phase are visible. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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