Fabrication and characterization of n-In0.4Ga0.6N/p-Si solar cell
| Autor: | Chen Chen Chung, Chi Lang Nguyen, Kartika Chandra Sahoo, Edward Yi Chang, Ching-Ting Lee, Binh Tinh Tran, Hai Dang Trinh, Tien Tung Luong, Kung Liang Lin, Man Chi Huang, Hung Wei Yu |
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| Rok vydání: | 2012 |
| Předmět: |
Fabrication
Materials science Renewable Energy Sustainability and the Environment business.industry Nanotechnology Polymer solar cell Surfaces Coatings and Films Electronic Optical and Magnetic Materials Characterization (materials science) law.invention Si substrate law Solar cell Optoelectronics Quantum efficiency business Current density Voltage |
| Zdroj: | Solar Energy Materials and Solar Cells. 102:208-211 |
| ISSN: | 0927-0248 |
| DOI: | 10.1016/j.solmat.2012.03.030 |
| Popis: | Electro-optic characteristics of a fabricated n-In0.4Ga0.6N/p-Si hetero-structure solar cell on Si substrate with Al and ITO (or Ti/Al/Ni/Au) materials for p and n-type contacts were investigated in this letter. The solar cell devices with ITO as n-type contacts were also compared to the solar cell using Ti/Al/Ni/Au as n-type contact in this study. High short-circuit current density observed for solar cell with ITO as n-type contacts due to the increased amount of light reaching the solar cell. The device with ITO contact exhibited an open-circuit voltage (Voc) of 1.52 V and a short-circuit current density (Jsc) of 8.68 mA/cm 2 with 54% fill factor. The conversion and external quantum efficiency (EQE) of the solar cell were 7.12 and 20.8%, respectively. Besides, a relationship between Voc and In content in the InxGa1� xN alloys for this type of solar cell was also derived. |
| Databáze: | OpenAIRE |
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