TM mode gain enhancement in GaInAs-InP lasers with tensile strained-layer superlattice
| Autor: | M. Okamoto, Yasuhiro Kondo, H. Mawatari, K. Magari, F. Kano, Y. Itaya, Ken-ichi Sato |
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| Rok vydání: | 1991 |
| Předmět: |
Materials science
business.industry Superlattice Condensed Matter Physics Laser Atomic and Molecular Physics and Optics Active layer Semiconductor laser theory Gallium arsenide law.invention chemistry.chemical_compound chemistry law Band diagram Optoelectronics Stimulated emission Electrical and Electronic Engineering business Diode |
| Zdroj: | IEEE Journal of Quantum Electronics. 27:1463-1469 |
| ISSN: | 0018-9197 |
| DOI: | 10.1109/3.89964 |
| Popis: | A novel tensile strained barrier (TSB) structure is proposed as the active layer to enhance the transverse-magnetic (TM) mode gain in long wavelength laser diodes. The band diagram of the TSB structure is described theoretically and experimentally. The gain difference between transverse-electric (TE) and TM modes is discussed for layers with various strain values and well layer thicknesses. The characteristics of TM-mode enhanced devices are reported as applications of the mode gain control using the TSB structure. In Ga/sub 0.27/In/sub 0.53/As-Ga/sub x/ In/sub 1-x/As tensile strained layer superlattice structures, controllability of a mode gain difference is achieved by changing the strain value and/or thickness of wells. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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