Sn doped GaSb grown by liquid phase epitaxy

Autor:	A.Yu. Gorbatchev, V.A. Mishurnyi, F. de Anda, T. Prutskij, Yu. Kudriavtsev, V.H. Compeán-Jasso
Rok vydání:	2013
Předmět:	Photoluminescence Materials science Doping Metals and Alloys Analytical chemistry chemistry.chemical_element Liquid phase Surfaces and Interfaces Activation energy Epitaxy Acceptor Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Impurity Materials Chemistry Tin
Zdroj:	Thin Solid Films. 548:168-170
ISSN:	0040-6090
DOI:	10.1016/j.tsf.2013.09.052
Popis:	Sn doped GaSb has been grown at 260 °C by liquid phase epitaxy. The experiments were done so as to determine if Sn could change its impurity type, from acceptor to donor, at such low growth temperature. It was found that Sn behaves as an acceptor irrespective of the growth temperature or the Sn concentration in the nutrient liquid. The samples were studied by photoluminescence and secondary ion mass spectroscopy. From these experiments the segregation coefficient of Sn in the Ga–Sb–Sn system at 260 °C has been measured. Also the activation energy of the Sn acceptor level was determined at 20 K.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::42720c0c8499a75fb2de0d1baf66306d https://doi.org/10.1016/j.tsf.2013.09.052 Zobrazit plný text záznamu Full Text from ScienceDirect