GaAs FET device and circuit simulation in SPICE
| Autor: | Hermann Statz, Robert A. Pucel, P. Newman, Hermann A. Haus, I.W. Smith |
|---|---|
| Rok vydání: | 1987 |
| Předmět: |
Engineering
business.industry Spice Electrical engineering Drain-induced barrier lowering Hardware_PERFORMANCEANDRELIABILITY Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Capacitance Electronic Optical and Magnetic Materials Threshold voltage Computer Science::Hardware Architecture Computer Science::Emerging Technologies Hardware_GENERAL Hardware_INTEGRATEDCIRCUITS Field-effect transistor Electrical and Electronic Engineering business Polarity (mutual inductance) Hardware_LOGICDESIGN Voltage Electronic circuit |
| Zdroj: | IEEE Transactions on Electron Devices. 34:160-169 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/t-ed.1987.22902 |
| Popis: | We have developed a GaAs FET model suitable for SPICE Circuit simulations. The dc equations are accurate to about 1 percent of the maximum drain current. A simple but accurate interpolation formula for drain current as a function of gate-to-source voltage connects the square-law behavior just above pinchoff and the square-root law for larger values of the drain current. The ac equations, with charge-storage elements, describe the variation of the gate-to-source and gate-to-drain capacitances as the drain-to-source voltage approaches zero and when this voltage becomes negative. Under normal operating conditions the gate-to-source capacitance is much larger than the gate-to-drain capacitance. At zero drain-to-source voltage both capacitances are about equal. For negative drain-to-source voltages the original source acts like a drain and vice versa. Consequently the normally large gate-to-source capacitance becomes small and acts like a gate-to-drain capacitance. In order to model these effect it is necessary to realize that, contrary to conventional SPICE usage, there are no separate gate-to-source and gate-to-drain charges, but that there is only one gate Charge which is a function of gate-to-source and gate-to-drain voltages. The present treatment Of these capacitances permits simulations-in which the drain-to-source voltage reverses polarity, as occurs in pass-gate circuits. |
| Databáze: | OpenAIRE |
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