Surface acoustic wave properties of ZnO films on {001}‐cut 〈110〉‐propagating GaAs substrates
| Autor: | F.S. Hickernell, William D. Hunt, Robert J. Higgins, Yoon-Kee Kim |
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| Rok vydání: | 1994 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 75:7299-7303 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.356639 |
| Popis: | GaAs has been employed as a material for acoustic charge transport (ACT) devices principally because it is a piezoelectric semiconductor. However, because GaAs is a weakly piezoelectric material, the surface acoustic wave (SAW) interdigital transducer (IDT) drive power required to achieve charge transport is typically about 27 dBm. An enhancement of the piezoelectric coupling could potentially improve device lifetime, reliability, dynamic range, and decrease device power consumption. To this end the use of a ZnO film on top of an ACT‐like substrate to enhance the piezoelectric coupling has been investigated. Moreover, the ZnO film structure would also make it possible to monolithically integrate SAW devices and GaAs electronics. In order to provide a basis for the design of such devices, SAW properties are reported, including velocity, effective piezoelectric coupling constant, and attenuation, measured on ZnO films sputtered on {001}‐cut 〈110〉‐propagating GaAs substrates. The measurements have been perfo... |
| Databáze: | OpenAIRE |
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