Room-Temperature Carbon Nanotube Single-Electron Transistors Fabricated Using Defect-Induced Plasma Process
| Autor: | Kazuhiko Matsumoto, Shin Iwasaki, Masatoshi Maeda, Yasuhide Ohno, Kenzo Maehashi, Takafumi Kamimura |
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| Rok vydání: | 2008 |
| Předmět: | |
| Zdroj: | Japanese Journal of Applied Physics. 47:2036-2039 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.47.2036 |
| Popis: | We propose and demonstrate the "defect-induced plasma process" for the fabrication of the room-temperature-operated carbon nanotube single-electron transistors (CNT-SETs) with the SiO2 protection films on the CNT channels. After introducing of defects in the CNT channels by O2 plasma irradiation through the SiO2 protection films, multi-quantum dots were fabricated in the CNT channels. The electrical properties of the CNT-SETs suggested that the oscillation in the drain currents as a function of the gate voltage was observed at room temperature, as a result of the Coulomb blockade effect. Moreover, we report that the yield of the CNT-SETs depended on the thickness of the SiO2 protection films on the CNT channels for the purpose of obtaining a high yield of CNT-SETs. The results indicate that the high yield of the CNT-SETs is as high as approximately 35% when the SiO2 protection film thickness is 60 nm. Consequently, the defect-induced plasma process is useful for obtaining the high yield efficiency of CNT-SETs operating at room temperature. |
| Databáze: | OpenAIRE |
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