A low-power single-ended SRAM in FinFET technology
| Autor: | Mohammad Hossein Moaiyeri, Shaahin Hessabi, Sina Sayyah Ensan, Majid Moghaddam |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
business.industry
Computer science Sram cell Electrical engineering 020206 networking & telecommunications 02 engineering and technology Power (physics) 03 medical and health sciences 0302 clinical medicine Power consumption Path (graph theory) 0202 electrical engineering electronic engineering information engineering Node (circuits) Static random-access memory Electrical and Electronic Engineering business 030217 neurology & neurosurgery |
| Zdroj: | AEU - International Journal of Electronics and Communications. 99:361-368 |
| ISSN: | 1434-8411 |
| DOI: | 10.1016/j.aeue.2018.12.015 |
| Popis: | This paper presents a single-ended low-power 7T SRAM cell in FinFET technology. This cell enhances read performance by isolating the storage node from the read path. Moreover, disconnecting the feedback path of the cross-coupled inverters during the write operation enhances WSNM by nearly 7.7X in comparison with the conventional 8T SRAM cell. By using only one bit-line, this cell reduces power consumption and PDP compared to the conventional 8T SRAM cell by 82% and 35%, respectively. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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