| Autor: |
Young Hun Kim, Young-Taek Song, In Jae Kim, K.N Oh, Suk-Kyoung Hong, Dong-Yun Shin, Il-Soo Choi, Jeong-Chil Shim, Sie-Wook Jeon, Eunsung Kim, Yun Chul Chung, S. H. Kim, Jinki Hong, Mann-Jang Park, Kihyun Kim |
| Rok vydání: |
1998 |
| Předmět: |
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| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| Popis: |
In order to investigate the surface states of electron which can tunnel through the sufficiently thin insulator, the electron tunneling spectroscopy is used to measure the tunneling current in function of the bias voltage, and directly to get the subbands of accumulation layer. The tunneling current through ZnS barrier in the Hg1-xCdxTe-ZnS-In junction structure is measured by various applied bias at 77 K and 4.2 K. From the measurement at 77 K, the subband energy levels in the electron accumulation layer at the surface of n-type Hg1-xCdxTe are found to be located at -59 meV for the ground state and -13 meV for the first excited state relative to the Fermi level of Hg1-xCdxTe. At low temperature when the applied bias is larger than the difference between the work function of In and the electron affinity of ZnS, a negative differential resistance is measured. On the calculation using transfer matrix method it is understood that this negative conductance is attributed to Fowler-Nordheim tunneling which is caused by the variation of ZnS barrier according to the various applied bias.© (1998) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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