P-i-n structures based on high-ohmic gettered gallium arsenide for α particle detectors

Autor:	L. V. Katsoev, N. M. Shmidt, V. N. Mdivani, A. T. Gorelenok, O. V. Titkova, A. A. Tomasov, V.M. Lantratov, S. S. Shmelev, N. A. Kalyuzhnyĭ, É. A. Il’ichev, Pavel N. Brunkov, S. A. Mintarov, V. V. Katsoev, Yu. M. Zadiranov
Rok vydání:	2006
Předmět:	Lanthanide chemistry.chemical_compound Materials science Physics and Astronomy (miscellaneous) chemistry Getter Detector Analytical chemistry Wafer Ohmic contact α particles Gallium arsenide
Zdroj:	Technical Physics Letters. 32:987-989
ISSN:	1090-6533 1063-7850
DOI:	10.1134/s1063785006110241
Popis:	It is shown that p-i-n detectors of α particles can be created using high-ohmic (n ∼ 1012 cm−3) gallium arsenide obtained through lanthanide gettering of a low-ohmic (n ∼ 1015 cm−3) initial material wafers.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::424cb4474d4a86c4778461c257b6d48e https://doi.org/10.1134/s1063785006110241 Zobrazit plný text záznamu Plný text ve formátu PDF