Heterogeneously structured phase-change materials and memory
| Autor: | Joonki Suh, Namwook Hur, Hongsik Jeong, Dong-Hyeok Lim, Wonjun Yang |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Computer science General Physics and Astronomy 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Noise (electronics) Phase change Neuromorphic engineering Electrical resistance and conductance Memory cell 0103 physical sciences Electronic engineering High current 0210 nano-technology Current density Reset (computing) |
| Zdroj: | Journal of Applied Physics. 129:050903 |
| ISSN: | 1089-7550 0021-8979 |
| Popis: | Phase-change memory (PCM), a non-volatile memory technology, is considered the most promising candidate for storage class memory and neuro-inspired devices. It is generally fabricated based on GeTe–Sb2Te3 pseudo-binary alloys. However, natively, it has technical limitations, such as noise and drift in electrical resistance and high current in operation for real-world device applications. Recently, heterogeneously structured PCMs (HET-PCMs), where phase-change materials are hetero-assembled with functional (barrier) materials in a memory cell, have shown a dramatic enhancement in device performance by reducing such inherent limitations. In this Perspective, we introduce recent developments in HET-PCMs and relevant mechanisms of operation in comparison with those of conventional alloy-type PCMs. We also highlight corresponding device enhancements, particularly their thermal stability, endurance, RESET current density, SET speed, and resistance drift. Last, we provide an outlook on promising research directions for HET-PCMs including PCM-based neuromorphic computing. |
| Databáze: | OpenAIRE |
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