A Study on Practically Unlimited Endurance of STT-MRAM
| Autor: | Yuan Xie, Jimmy Kan, Mahendra Pakala, Jaesoo Ahn, Chando Park, C. Ching, Seung H. Kang |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Magnetoresistive random-access memory Engineering Magnetoresistance Dielectric strength business.industry Electrical engineering Time-dependent gate oxide breakdown 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials Duty cycle 0103 physical sciences Electronic engineering Breakdown voltage Torque Electrical and Electronic Engineering 0210 nano-technology business Voltage |
| Zdroj: | IEEE Transactions on Electron Devices. 64:3639-3646 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | Magnetic tunnel junctions integrated for spin-transfer torque magnetoresistive random-access memory are by far the only known solid-state memory element that can realize a combination of fast read/write speed and high endurance. This paper presents a comprehensive validation of high endurance of deeply scaled perpendicular magnetic tunnel junctions (pMTJs) in light of various potential spin-transfer torque magnetoresistive random-access memory (STT-MRAM) use cases. A statistical study is conducted on the time-dependent dielectric breakdown (TDDB) properties and the dependence of the pMTJ lifetime on voltage, polarity, pulsewidth, duty cycle, and temperature. The experimental results coupled with TDDB models project $> 10^{15}$ write cycles. Furthermore, this work reports system-level workload characterizations to understand the practical endurance requirements for realistic memory applications. The results suggest that the cycling endurance of STT-MRAM is “practically unlimited,” which exceeds the requirements of various memory use cases, including high-performance applications such as CPU level-2 and level-3 caches. |
| Databáze: | OpenAIRE |
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