| Popis: |
The quality of resist profiles obtained In surface Imaging techniques based on selective diffusion of a silylating agent and subsequent dry development depends on the sificon distribution after silylatlon and the quality of the transfer of this silicon image during dry development. Ideally, the silicon distribution at the pattern edge should show a very abrupt change from low to high silicon incorporation. This so called "silicon contrast" depends upon the composition of the resist materials and the silylatlon conditions. In this paper, we will describe the effect of resist parameters such as sensitiser type and concentration, resin type, molecular weight, molecular weight distribution and hydroxyl group content of the resin on the lithographic characteristics of the resist materials In the DESIRE process. |
