Highly-doped p-type few-layer graphene on UID off-axis homoepitaxial 4H–SiC
Autor: | Dariusz Czolak, Pawel Kaminski, Jaroslaw Gaca, Michal Kozubal, Krystyna Przyborowska, Paweł Piotr Michałowski, A. Dobrowolski, Maciej J. Szary, Tymoteusz Ciuk, Marek Wojcik, Wawrzyniec Kaszub, Adrianna Chamryga, Beata Stanczyk, Roman Kozlowski, J. Jagiełło, Kinga Kosciewicz |
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Rok vydání: | 2021 |
Předmět: |
010302 applied physics
Materials science Graphene business.industry Doping General Physics and Astronomy 02 engineering and technology Chemical vapor deposition Substrate (electronics) 021001 nanoscience & nanotechnology 01 natural sciences law.invention symbols.namesake law Hall effect 0103 physical sciences symbols Optoelectronics General Materials Science 0210 nano-technology business Raman spectroscopy Vicinal Sheet resistance |
Zdroj: | Current Applied Physics. 27:17-24 |
ISSN: | 1567-1739 |
Popis: | In this report we investigate structural and electrical properties of epitaxial Chemical Vapor Deposition quasi-free-standing graphene on an unintentionally-doped homoepitaxial layer grown on a conducting 4H–SiC substrate 4° off-axis from the basal [0001] direction towards [11-20]. Due to high density of SiC vicinal surfaces the deposited graphene is densely stepped and gains unique characteristics. Its morphology is studied with atomic force and scanning electron microscopy. Its few-layer character and p-type conductance are deduced from a Raman map and its layers structure determined from a high-resolution X-ray diffraction pattern. Transport properties of the graphene are estimated through Hall effect measurements between 100 and 350 K. The results reveal an unusually low sheet resistance below 100 Ω/sq and high hole concentration of the order of 1015 cm−2. We find that the material's electrical properties resemble those of an epitaxially-grown SiC PIN diode, making it an attractive platform for the semiconductor devices technology. |
Databáze: | OpenAIRE |
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