X‐ray diffraction analysis and x‐ray photoelectron spectroscopy of α‐ and β‐W thin films grown by ion beam assisted deposition
| Autor: | B.A. Doele, I. Weerasekera, S. I. Shah, Karl Unruh, C. R. Fincher |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Chemistry
Analytical chemistry Surfaces and Interfaces Substrate (electronics) Condensed Matter Physics Ion gun Surfaces Coatings and Films Ion Condensed Matter::Materials Science X-ray photoelectron spectroscopy Physics::Plasma Physics Sputtering Condensed Matter::Superconductivity Phase (matter) Thin film Ion beam-assisted deposition |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 11:1470-1473 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.578686 |
| Popis: | Thin W films have been deposited by dual ion beam sputtering using a sputtering ion gun and an assisting ion gun. The crystal structure of the deposited films was strongly dependent on the energy of the assisting ions, substrate temperature, and the thickness of the film. All these variables were found to affect the oxygen concentration of the film which in turn, determines whether the film will have an A‐2 body‐centered‐cubic α‐W phase, an A‐15 face‐centered‐cubic‐like β‐W phase, or a mixture of the two. Assisting ions and substrate temperature both increase the diffusivities of W and O resulting in a decreased oxygen concentration in the film which makes the α‐W phase more stable. Films deposited at low substrate temperatures and without any ion bombardment show only the β‐W phase. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|