| Autor: |
A. Naas, A. Beya-Wakata, D. De Sousa-Meneses, B. Hakim, E. Ntsoenzok |
| Rok vydání: |
2014 |
| Předmět: |
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| Zdroj: |
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 339:46-52 |
| ISSN: |
0168-583X |
| Popis: |
We studied the distribution of implanted Xe in amorphous SiO 2 . Our results clearly showed that Xe profile is energy and fluence dependent. By varying ion energy from 50 to 300 keV, we found that its thermal out-diffusion is very conventional for the first two energies and unexpected for the highest energy. In that last case Xe main peak increases with thermal annealing. Instead of out-diffusing, Xe seems to be driven toward the main peak. The effect of ion fluence is similar to energy one with a conventional out-diffusion for lower fluences (5 × 10 15 and 1 × 10 16 cm −2 ) while higher fluences (3.5 × 10 16 and 5 × 10 16 cm −2 ) display an increase of the main peak with annealing. Such a behavior can be linked to the formation (or not) of a high density of stable bubbles. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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