Indium Aluminum Zinc Oxide Thin Film Transistor With Al2O3 Dielectric for UV Sensing
| Autor: | Sheng Po Chang, Tien-Hung Cheng, Yen-Chi Cheng, Shoou-Jinn Chang |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Analytical chemistry chemistry.chemical_element Chemical vapor deposition Dielectric Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Active layer Threshold voltage Atomic layer deposition chemistry Aluminium Thin-film transistor Electrical and Electronic Engineering Indium |
| Zdroj: | IEEE Photonics Technology Letters. 31:1005-1008 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/lpt.2019.2914726 |
| Popis: | Two bottom-gate indium aluminum zinc oxide thin-film transistors (TFTs) were fabricated with different dielectric layers. The TFT with Al2O3 deposited through atomic layer deposition (ALD) had higher field mobility of 0.48 cm $^{\mathbf {2}}/\text{V}\cdot \text{s}$ , Ion/Ioff of $9.7{}\boldsymbol {\times }{} 10^{\mathbf {7}}$ , and lower subthreshold swing of 0.3 V/dec. The hysteresis of the two devices showed that the device with Al2O3 dielectric layer had a lower threshold voltage shift (−0.065 V) compared with that of the device with the SiO2 dielectric layer (−0.352 V). These results revealed that the device with Al2O3 dielectric layer had fewer interface traps between the active layer and dielectric layer than the device with the SiO2 dielectric layer deposited through plasma-enhanced chemical vapor deposition. Because of the improvement of interface traps, the device with Al2O3 dielectric layer had high responsivity (6.18 A/W) and rejection ratio ( $1.74{}\boldsymbol {\times }{} 10^{\mathbf {3}}$ ); this device has high potential for use in ultraviolet sensing applications. |
| Databáze: | OpenAIRE |
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