Measure the barrier height of manganite p–n heterojunction by activation energy measurement

Autor:	Mei Wang, Jun-Jie Ma, R.W. Wang, Deng-Jing Wang, Y. Li
Rok vydání:	2015
Předmět:	Materials science Condensed matter physics Mechanics of Materials Mechanical Engineering Analytical chemistry General Materials Science Heterojunction Activation energy Condensed Matter Physics Manganite Measure (mathematics) Deposition (law) Pulsed laser deposition
Zdroj:	Materials Science in Semiconductor Processing. 29:213-217
ISSN:	1369-8001
DOI:	10.1016/j.mssp.2014.03.014
Popis:	The barrier height of the manganite based p–n heterojunction is identified from the activation energy. The La0.35Pr0.32Ca0.33MnO3/Nb-doped SrTiO3 p–n heterojunction is fabricated by the pulse laser deposition technology. The junction shows good rectifying behavior which can be well described by the Shockley equation. A satisfactorily logarithmic linear dependence of resistance on temperature is observed, and also the relation between bias and activation energy (EA) deduced from the R−1/T curves is linear. As a result, the interfacial barrier of the heterojunction is obtained by extrapolating the Bias –EA plot to Y axis, which is 0.95 eV.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::422eb8339324cd869c310994bd277e3b https://doi.org/10.1016/j.mssp.2014.03.014 Zobrazit plný text záznamu Full Text from ScienceDirect