Formation of defects in GaAs and Si as a result of Pd deposition onto the surface
| Autor: | I. A. Karpovich, E. L. Shobolov, S. V. Tikhov, I. A. Andryushchenko |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
Silicon business.industry Inorganic chemistry chemistry.chemical_element Photoelectric effect Condensed Matter Physics Crystallographic defect Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Semiconductor chemistry Optoelectronics business Spectroscopy Layer (electronics) Deposition (law) Quantum well |
| Zdroj: | Semiconductors. 40:314-318 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782606030110 |
| Popis: | Photoelectric spectroscopy applied to the barriers between a semiconductor on a metal and an electrolyte is used to study the formation of defects in the near-contact region of GaAs and Si as a result of Pd deposition onto the surface. It is shown that a layer that arises as a result of the chemical interaction between Pd and a semiconductor at 100°C, containing defects with deep levels, extends to ∼0.4 μm deep in GaAs and ∼1 μm in Si. If one or several strained layers of InGaAs quantum wells are incorporated into the near-contact GaAs region, the defects do virtually not penetrate deeper than the first quantum well. This circumstance makes it possible to reduce the depth of the defect-containing layer; however, the volume concentration of the defects in this layer increases appreciably in this case. |
| Databáze: | OpenAIRE |
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