| Autor: |
Hajime Yamagishi, Masanori Hosomi, K. Yamane, Kazuhiro Bessho, H. Hachino, C. Fukumoto, Hiroshi Kano, H. Yamada, Takashi Yamamoto, M. Shoji, Yutaka Higo, H. Nagao |
| Rok vydání: |
2006 |
| Předmět: |
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| Zdroj: |
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.. |
| DOI: |
10.1109/iedm.2005.1609379 |
| Popis: |
A novel nonvolatile memory utilizing spin torque transfer magnetization switching (STS), abbreviated spin-RAM hereafter, is presented for the first time. The spin-RAM is programmed by magnetization reversal through an interaction of a spin momentum-torque-transferred current and a magnetic moment of memory layers in magnetic tunnel junctions (MTJs), and therefore an external magnetic field is unnecessary as that for a conventional MRAM. This new programming mode has been accomplished owing to our tailored MTJ, which has an oval shape of 100 times 150 nm. The memory cell is based on a 1-transistor and a 1-MTJ (ITU) structure. The 4kbit spin-RAM was fabricated on a 4 level metal, 0.18 mum CMOS process. In this work, writing speed as high as 2 ns, and a write current as low as 200 muA were successfully demonstrated. It has been proved that spin-RAM possesses outstanding characteristics such as high speed, low power and high scalability for the next generation universal memory |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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