Surface channel MESFETs on nanocrystalline diamond
| Autor: | K. Janischowsky, M. Kubovic, Erhard Kohn |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Materials science
business.industry Mechanical Engineering Nucleation Charge density General Chemistry Signal Electronic Optical and Magnetic Materials Threshold voltage Nanocrystal Materials Chemistry Optoelectronics Field-effect transistor Grain boundary Electrical and Electronic Engineering Thin film business |
| Zdroj: | Diamond and Related Materials. 14:514-517 |
| ISSN: | 0925-9635 |
| DOI: | 10.1016/j.diamond.2004.12.021 |
| Popis: | Due to its unique properties, nanocrystalline diamond (NCD) can be considered for variety of applications in mechanics, biochemistry, etc. The combination of these applications with electronic devices would enable integrated in-situ signal processing and thus the development of smart sensors and actuators. In order to investigate such integration concepts, surface channel FETs on H-terminated nanocrystalline diamond have been fabricated and evaluated. Despite the significant amount of grain boundaries in nanocrystalline diamond full operation of the FETs could be obtained. DC, CV and small signal measurements have been performed for devices with gate lengths comparable to the drain size (300 nm) of nanocrystalline diamond and the results were compared to previously fabricated FETs on single crystal diamond (SCD). Except for an essentially reduced mobility no changes in sheet charge density, threshold voltage or stability could be observed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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