Advanced 10 nm Width Silicon-on-Insulator Tri-Gate Transistors with NO Annealing of Gate Oxide Using Optimized Novel Silicon-on-Insulator Realization Technology
| Autor: | Sung Hwan Kim, Hyun Jun Bae, Chang Woo Oh, Dong-Won Kim, Satoru Yamada, Gyoyoung Jin, Yonghan Roh |
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| Rok vydání: | 2012 |
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| Zdroj: | Japanese Journal of Applied Physics. 51:04DC04 |
| ISSN: | 1347-4065 0021-4922 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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