Advanced 10 nm Width Silicon-on-Insulator Tri-Gate Transistors with NO Annealing of Gate Oxide Using Optimized Novel Silicon-on-Insulator Realization Technology

Autor:	Sung Hwan Kim, Hyun Jun Bae, Chang Woo Oh, Dong-Won Kim, Satoru Yamada, Gyoyoung Jin, Yonghan Roh
Rok vydání:	2012
Předmět:	Physics and Astronomy (miscellaneous) General Engineering General Physics and Astronomy
Zdroj:	Japanese Journal of Applied Physics. 51:04DC04
ISSN:	1347-4065 0021-4922
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::421bb5e83028f6c93a420435045e6f22 https://doi.org/10.7567/jjap.51.04dc04 Zobrazit plný text záznamu