Boron segregation control in silicon crystal ingots grown in Czochralski process

Autor:	Bok-Cheol Sim, Hong-Woo Lee, Kwang-Hun Kim
Rok vydání:	2006
Předmět:	Silicon Dopant business.industry Doping Analytical chemistry chemistry.chemical_element Crucible Condensed Matter Physics law.invention Inorganic Chemistry Monocrystalline silicon Crystallography Semiconductor chemistry law Materials Chemistry business Boron Czochralski process
Zdroj:	Journal of Crystal Growth. 290:665-669
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2006.02.003
Popis:	Boron-doped silicon single crystals of 207 mm diameter with various growing conditions are grown from a large amount of the melt in the cusp-magnetic Czochralski method, and the effects of growing parameters on dopant concentrations in the crystals are experimentally investigated. Equilibrium distribution coefficient of boron calculated by BPS model is 0.716. With the crystal rotation ( ω ) of 13 rpm and the crucible rotation of - 0.5 rpm , the effective distribution coefficient ( k e ) is 0.751 in zero magnetic strength and increases up to 0.78 in the magnetic strength of 640 G. For ω ⩾ 7 rpm , there is no significant influence of ω on k e . With ω ⩽ 3 rpm , k e is almost unity. The experimental results are compared with theory.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::421a78b36377bb19c8f79b8ebe636987 https://doi.org/10.1016/j.jcrysgro.2006.02.003 Zobrazit plný text záznamu Full Text from ScienceDirect