Autor: |
Jaehyouk Choi, Kyutae Lim, Taejoong Song, Joy Laskar, Franklin Bien, Stephen T. Kim |
Rok vydání: |
2010 |
Předmět: |
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Zdroj: |
2010 IEEE Radio Frequency Integrated Circuits Symposium. |
DOI: |
10.1109/rfic.2010.5477403 |
Popis: |
A semi-active high-efficient (SA-HE) CMOS rectifier with reverse leakage control has been developed. It employs a cross-coupled NMOS pair and two leakage control comparators to reduce reverse charge leakage current. In addition, the adaptive body bias control technique is utilized to improve the reliability of the rectifier. The SA-HE rectifier has been fabricated in a 0.18um CMOS technology and shows 15% improvement over conventional rectifiers. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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