Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films
| Autor: | Byeonghyeon Jang, Seung Gi Seo, Hyungjun Kim, Seungmin Yeo, Taejin Choi, Jeong Gyu Song, Soo-Hyun Kim |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Hydrogen chemistry.chemical_element Diamond 02 engineering and technology Surfaces and Interfaces General Chemistry engineering.material 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Nanocrystalline material 0104 chemical sciences Surfaces Coatings and Films Secondary ion mass spectrometry Atomic layer deposition Chemical engineering Amorphous carbon chemistry Materials Chemistry engineering Thin film 0210 nano-technology Carbon |
| Zdroj: | Surface and Coatings Technology. 344:12-20 |
| ISSN: | 0257-8972 |
| Popis: | Hydrogenated amorphous carbon (a-C:H) thin films were prepared by hydrogen plasma-enhanced atomic layer deposition (PE-ALD). The a-C:H thin films were grown at low temperatures in the range of 150–350 °C using CBr4 as the precursor and hydrogen plasma as the reactant. Raman spectroscopy, secondary ion mass spectrometry, X-ray photoelectron spectroscopy and Fourier transform infrared measurements showed that the a-C:H films consist of hydrogenated nanocrystalline sp3 diamond, disordered sp3 carbon and sp2-hybridized graphitic carbon incorporated with oxygen as a main contaminant. Moreover, the incorporation of bromine and oxygen in the a-C:H films was significantly reduced upon increasing the growth temperature from 200 to 300 °C. Surface hydroxylation and precursor exposure pretreatments were employed to saturate the adsorption of CBr4 precursors and enhance the initial nucleation of carbon during the deposition of the a-C:H thin film by the PE-ALD process. In addition, the conformal growth of a-C:H thin films on three-dimensional structures was confirmed. |
| Databáze: | OpenAIRE |
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