Conditions for parametric and free-carrier oscillation in SOI ring cavities with active carrier removal
| Autor: | Christopher Rogers, Levon Mirzoyan, Ryan Hamerly, Kambiz Jamshidi, Dodd Gray, Meysam Namdari |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
business.industry Terahertz radiation Oscillation Physics::Optics Silicon on insulator Nonlinear optics 02 engineering and technology Carrier lifetime 020210 optoelectronics & photonics Dispersion (optics) 0202 electrical engineering electronic engineering information engineering Optoelectronics Photonics business Microwave |
| Zdroj: | 2017 International Topical Meeting on Microwave Photonics (MWP). |
| DOI: | 10.1109/mwp.2017.8168792 |
| Popis: | We model optical parametric oscillation in ring cavities, focusing on silicon at 1.55μm, as a potential frequency-comb source for microwave and terahertz generation. Oscillation is possible if free-carrier absorption can be mitigated; this can be achieved using carrier sweep-out in a reverse-biased p-i-n junction to reduce the carrier lifetime. By varying the pump power, detuning, and reverse-bias voltage, it is possible to realize amplification in cavities with both normal and anomalous dispersion. Furthermore, a free-carrier self-pulsing instability leads to rich dynamics when the carrier lifetime is sufficiently long. |
| Databáze: | OpenAIRE |
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