| Autor: |
Jiang Lan, Gui Yan, Shen Yaoting |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
2020 China Semiconductor Technology International Conference (CSTIC). |
| DOI: |
10.1109/cstic49141.2020.9282509 |
| Popis: |
The contact resistance between silicides and Si/SiGe substrates plays more and more important role in both the intrinsic device resistance and parasitic external resistance at 14nm FinFET technology and beyond. Titanium silicide (TiSix) is commonly used as S/D contact material in 14nm nodes because of its good thermal stability. In this study, soak anneal and millisecond anneal (MSA) as different titanium silicide (TiSix) formation processes are investigated in 14nm node both on blanket and pattern wafers. The sheet resistance is measured by four-point probe method. Also contact resistance of silicide on pattern wafer is obtained by wafer acceptance test (WAT). |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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