Deep-UV antireflective coating: ellipsometry and XPS characterization
| Autor: | B. Delahaye, X. Boddaert, A. Caramante, E. Josse |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Materials science
Analytical chemistry Context (language use) Surfaces and Interfaces General Chemistry Condensed Matter Physics Surfaces Coatings and Films law.invention Anti-reflective coating X-ray photoelectron spectroscopy law Ellipsometry Materials Chemistry Thin film Photolithography Absorption (electromagnetic radiation) Refractive index |
| Zdroj: | Surface and Interface Analysis. 30:531-533 |
| ISSN: | 1096-9918 0142-2421 |
| DOI: | 10.1002/1096-9918(200008)30:1<531::aid-sia840>3.0.co;2-q |
| Popis: | Oxynitride deep-ultraviolet antireflective coating (DARC) of Si wafers is used to get better lithography at 248 nm. The thickness and the optical parameters of these films have to be optimized to get good and reproducible results. In this context, DARC layers with different N2O flows have been processed and characterized by ellipsometry and XPS in order to determine the optical parameters n (refractive index) and k (absorption index), the stoichiometry and the nature of the Si bonds. The DARC layers appear to be homogeneous, although short-range variations (1 nm) could hardly be detected by XPS. The correlation between XPS and ellipsometry results is fairly good and confirms that absorption is directly correlated to the amount of Si–Si bonds. A ‘three-component mode’ assuming that the DARC layer constitutes Si, SiO2 and Si3N4 has been used to calculate the refractive index. The agreement between this calculated index and the one determined by ellipsometry is fairly good. Copyright © 2000 John Wiley & Sons, Ltd. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Plný text