Effects of low temperatures and intensities on GaAs and GaAs/Ge solar cells
| Autor: | C. Flores, R. Campesato |
|---|---|
| Rok vydání: | 1991 |
| Předmět: |
congenital
hereditary and neonatal diseases and abnormalities Materials science Open-circuit voltage business.industry Energy conversion efficiency Electrical engineering nutritional and metabolic diseases chemistry.chemical_element Germanium Substrate (electronics) Chemical vapor deposition Electronic Optical and Magnetic Materials Gallium arsenide law.invention chemistry.chemical_compound chemistry law Solar cell Optoelectronics Metalorganic vapour phase epitaxy Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 38:1233-1237 |
| ISSN: | 0018-9383 |
| Popis: | GaAs and GaAs/Ge solar cells grown by metalorganic chemical vapor deposition (MOCVD) were characterized at very low temperature (-185 degrees C) and solar intensity (0.25 suns) to simulate the cell behavior in a severe interplanetary environment. A comparison is also made with GaAs cells grown with the liquid-phase-epitaxy (LPE) technique. The analysis carried out from -185 to +50 degrees C shows, in particular, different behaviors for GaAs/Ge cells with active and passive Ge substrates; the GaAs/Ge passive cell behaves as a GaAs on GaAs cell, indicating that from the thermal and optical point of view, Ge acts only as a mechanical support. The GaAs cell with an active Ga substrate is affected by a notch in the I-V curves, which is more evident at low temperatures but reduces at low intensities. The GaAs/GaAs MOCVD cell shows the best performance at low temperature and intensity with a conversion efficiency of 27.2%. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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