Si substrate based GaAs/AlGaAs quantum well infrared photodetector with Ge buffer
| Autor: | Soon Fatt Yoon, Etienne Rodriguez, Kian Hua Tan, Wang Qijie, Wang Chongwu, Carlo Sirtori, Satrio Wicaksono, Kwang Hong Lee |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
Silicon business.industry chemistry.chemical_element Photodetector Germanium Substrate (electronics) Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Gallium arsenide Condensed Matter::Materials Science Responsivity chemistry.chemical_compound chemistry Optoelectronics business Quantum well infrared photodetector Layer (electronics) Astrophysics::Galaxy Astrophysics |
| Zdroj: | 2021 IEEE Photonics Society Summer Topicals Meeting Series (SUM). |
| DOI: | 10.1109/sum48717.2021.9505769 |
| Popis: | Ge buffer layer was introduced between the AlGaAs/GaAs quantum well infrared photodetectors active region and Si substrate, reducing threading dislocation density. The QWIPs on both Si and GaAs substrate exhibit similar responsivity, and detectivity. This work paves the way for CMOS compatible, on-chip mid-infrared detectors. |
| Databáze: | OpenAIRE |
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