ReRAM Technologies for Embedded Memory and Further Applications
| Autor: | Zhiqiang Wei, Guo An Du, Yukio Hayakawa, Hideto Kotani, Takumi Mikawa, Stanley Pl Yeoh, Koichi Kawashima, Jiann Fu Chen, Masayoshi Nakamura, Shinichi Yoneda, Mars Hy Chen, Kazuyuki Kouno, Shunsaku Muraoka, Satoru Ito |
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| Rok vydání: | 2018 |
| Předmět: |
Production line
Artificial neural network 010308 nuclear & particles physics Computer science Process (computing) Embedded memory 02 engineering and technology 01 natural sciences 020202 computer hardware & architecture Resistive random-access memory Reliability (semiconductor) Neuromorphic engineering Characterization methods 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Electronic engineering |
| Zdroj: | 2018 IEEE International Memory Workshop (IMW). |
| Popis: | We have developed 40nm ReRAM for low-power embedded applications. Using resistive switching element process technologies and filament characterization methods to realize good switching characteristics, highly reliable 8M-bit 40nm ReRAM array characteristics were obtained in a mass production line. Endurance of 100k cycles and over 10 years' retention at 85 ˚C after 10k cycles were demonstrated. The potential to widen the range of ReRAM applications, such as their use in analog neuromorphic devices for low-power neural network processors and hydrogen sensors based on ReRAM technology, are also described. |
| Databáze: | OpenAIRE |
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