Hall effect and resistivity of high-Tcoxides in the bipolaron model

Autor: A. S. Alexandrov, Nevill Mott, A.M. Bratkovsky
Rok vydání: 1994
Předmět:
Zdroj: Physical Review Letters. 72:1734-1737
ISSN: 0031-9007
DOI: 10.1103/physrevlett.72.1734
Popis: We discuss the Hall effect and resistivity above ${\mathit{T}}_{\mathit{c}}$, using a variant of the bipolaron theory which takes into account Anderson localization of the bosons by disorder. The model supposes that ${\mathit{R}}_{\mathit{H}}$=1/2${\mathit{en}}_{\mathit{b}}$c, where ${\mathit{n}}_{\mathit{b}}$ is the number of delocalized carriers. Temperature and doping dependences of \ensuremath{\rho}, ${\mathit{R}}_{\mathit{H}}$, cot${\mathrm{\ensuremath{\theta}}}_{\mathit{H}}$, and the ``spin'' gap in ${\mathrm{YBa}}_{2}$${\mathrm{Cu}}_{3}$${\mathrm{O}}_{7\mathrm{\ensuremath{-}}\mathrm{\ensuremath{\delta}}}$ are explained.
Databáze: OpenAIRE