Synthesis and magnetoresistance of (Cd1−x Znx)3As2 (x = 0,007) crystals

Autor:	S. Yu. Gavrilkin, A. V. Kochura, A. P. Kuz’menko, V. S. Zakhvalinskii, V. A. Kulbachinskii, A. F. Knjazev, E. A. Pilyuk, B. A. Aronzon, L. N. Oveshnikov, A. B. Davydov
Rok vydání:	2019
Předmět:	Materials science Condensed matter physics Magnetoresistance 0103 physical sciences 02 engineering and technology General Medicine 021001 nanoscience & nanotechnology 010306 general physics 0210 nano-technology 01 natural sciences
Zdroj:	Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 20:134-141
ISSN:	2413-6387 1609-3577
Popis:	The vapor phase growth of Cd3As2—Zn3As2 (in the following (Cd1−x Znx)3As2 solid solutions process is described. The (Cd0,993 Zn0,007)3As2 solid solution single crystals were synthesized. Scanning electron microscopy and electron diffraction data suggest high crystalline quality of studied sample. Its structure and surface morphology, indicating the presence of growth nuclei and cleavage planes, were investigated. Giant anisotropic magnetoresistance and Shubnikov — de Haas oscillations were observed at low temperatures. Obtained results suggests that peculiarities of Dirac semimetal phase persist in (Cd1−x Znx)3As2 solid solution at low zinc content. At the same time, there are indications of some differences with initial Cd3As2 properties.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::41cdb7d4f75b7d54e8b9bc6f86341d92 https://doi.org/10.17073/1609-3577-2017-2-134-141 Zobrazit plný text záznamu