Synthesis and magnetoresistance of (Cd1−x Znx)3As2 (x = 0,007) crystals
Autor: | S. Yu. Gavrilkin, A. V. Kochura, A. P. Kuz’menko, V. S. Zakhvalinskii, V. A. Kulbachinskii, A. F. Knjazev, E. A. Pilyuk, B. A. Aronzon, L. N. Oveshnikov, A. B. Davydov |
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Rok vydání: | 2019 |
Předmět: | |
Zdroj: | Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 20:134-141 |
ISSN: | 2413-6387 1609-3577 |
Popis: | The vapor phase growth of Cd3As2—Zn3As2 (in the following (Cd1−x Znx)3As2 solid solutions process is described. The (Cd0,993 Zn0,007)3As2 solid solution single crystals were synthesized. Scanning electron microscopy and electron diffraction data suggest high crystalline quality of studied sample. Its structure and surface morphology, indicating the presence of growth nuclei and cleavage planes, were investigated. Giant anisotropic magnetoresistance and Shubnikov — de Haas oscillations were observed at low temperatures. Obtained results suggests that peculiarities of Dirac semimetal phase persist in (Cd1−x Znx)3As2 solid solution at low zinc content. At the same time, there are indications of some differences with initial Cd3As2 properties. |
Databáze: | OpenAIRE |
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