Selective growth of carbon nanotube on silicon substrates
Autor: | H. Tokumoto, Toru Shimizu, A. Ando, Shen-ming Zhu, H. Abe, Hao Shen Zhou, Xiao-ping Zou |
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Rok vydání: | 2006 |
Předmět: |
Fabrication
Materials science Silicon Metals and Alloys chemistry.chemical_element Nanoparticle Nanotechnology Substrate (electronics) Carbon nanotube Geotechnical Engineering and Engineering Geology Condensed Matter Physics law.invention Carbon nanotube quantum dot chemistry Potential applications of carbon nanotubes law Materials Chemistry Carbon nanotube supported catalyst |
Zdroj: | Transactions of Nonferrous Metals Society of China. 16:s377-s380 |
ISSN: | 1003-6326 |
Popis: | The carbon nanotube (CNT) growth of iron oxide-deposited trench-patterns and the locally-ordered CNT arrays on silicon substrate were achieved by simple thermal chemical vapor deposition(STCVD) of ethanol vapor. The CNTs were uniformly synthesized with good selectivity on trench-patterned silicon substrates. This fabrication process is compatible with currently used semiconductor-processing technologies, and the carbon-nanotube fabrication process can be widely applied for the development of electronic devices using carbon-nanotube field emitters as cold cathodes and can revolutionize the area of field-emitting electronic devices. The site-selective growth of CNT from an iron oxide nanoparticle catalyst patterned were also achieved by drying-mediated self-assembly technique. The present method offers a simple and cost-effective method to grow carbon nanotubes with self-assembled patterns. |
Databáze: | OpenAIRE |
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