High-efficiency GaAs solar cells grown on passive-Ge substrates by atmospheric pressure OMVPE
| Autor: | J. C. Chen, J. I. Cubbage, J.G. Werthen, M.L. Ristow |
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| Rok vydání: | 2002 |
| Předmět: |
congenital
hereditary and neonatal diseases and abnormalities Materials science Atmospheric pressure business.industry Energy conversion efficiency nutritional and metabolic diseases chemistry.chemical_element Germanium Heterojunction Crystal growth Thermal expansion Gallium arsenide chemistry.chemical_compound chemistry Optoelectronics business Layer (electronics) |
| Zdroj: | The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991. |
| Popis: | High-efficiency (up to 19%, AM0) GaAs solar cells on passive-Ge substrates have been grown by an atmospheric pressure OMVPE. A systematic study was carried out to find the optimum growth conditions. Results indicate that only a narrow temperature window (600-630 degrees C) for the initial layer growth will give the passive-Ge junction together with good GaAs solar cells. > |
| Databáze: | OpenAIRE |
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