Zinc diffusion in III‐V semiconductors using a cubic‐zirconia protection layer

Autor:	Aland K. Chin, J. E. Bisberg, F. P. Dabkowski
Rok vydání:	1990
Předmět:	Photoluminescence Passivation business.industry Thermal decomposition Analytical chemistry General Physics and Astronomy Mineralogy chemistry.chemical_element Zinc Semiconductor chemistry business p–n junction Layer (electronics) Yttria-stabilized zirconia
Zdroj:	Journal of Applied Physics. 67:1347-1351
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.345688
Popis:	Zinc was diffused into GaAs, Al0.38Ga0.62As, and GaAs0.6P0.4 using a 2000–3000‐A‐thick yttria‐stabilized cubic‐zirconia (YSZ) protection layer to produce planar p‐n junctions. The YSZ layer greatly reduced thermal decomposition of the semiconductor while allowing zinc to diffuse into the III‐V semiconductors. The diffusion depth showed a square‐root‐of‐time dependence for all samples protected with YSZ. Characterization of the GaAs diffused with the YSZ protection process indicates that the YSZ layer has virtually no effect on either the carrier concentration profile or activation energy. No thermal decomposition was observed by visual inspection following a diffusion using only elemental Zn on the GaAs, Al0.38Ga0.62As, or GaAs0.6P0.4 samples protected with a YSZ layer. Photoluminescence analysis shows that the YSZ‐protected GaAs samples have higher luminescence efficiency relative to unprotected samples. Device fabrication has been demonstrated by combining the YSZ passivation process with selective area...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::41abaaca40c8bd33cd4b5a58cb660fe8 https://doi.org/10.1063/1.345688 Zobrazit plný text záznamu