| Popis: |
One of the crucial components in FET-based ICs is the thin dielectric layer which insulates the active portion of the device from the gate. Suitable silicon nitride layers are formed by thermal nitridation of Si, which due to the diffusion barrier effect is limited to a silicon nitride thickness less than 6 nm, and by plasma nitridation in dry NH3 up to a thickness of 20 nm [1], by ion implantation of nitrogen [2], plasma deposition, or nitridation of silicon oxide to form nitride oxide layers with a variable nitrogen content of up to 50 at%. |
